Growth of LaAlO3 on silicon via an ultrathin SrTiO3 buffer layer by molecular-beam epitaxy

REDES February 1, 2021February 1, 2021 Publications

Growth of LaAlO₃ on silicon via an ultrathin SrTiO₃ buffer layer by molecular-beam epitaxy
Zhe Wang, Zhen Chen, Antonio B Mei, Xue Bai, Lena F Kourkoutis, David A Muller, Darrell G Schlom
J. Vac. Sci. Technol. A 36, 021507 (2018)

Growth of LaAlO3 on silicon via an ultrathin SrTiO3 buffer layer by molecular-beam epitaxy

Tagged on: 2018

← Bending and breaking of stripes in a charge ordered manganite
Nature and evolution of incommensurate charge order in manganites visualized with cryogenic scanning transmission electron microscopy →