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Epitaxial Ba0.5Sr0.5TiO3 – GaN heterostructures with abrupt interfaces

Chris Lastovicka January 26, 2021January 26, 2021 Publications

Epitaxial Ba0.5Sr0.5TiO3 – GaN heterostructures with abrupt interfaces
M. D. Losego, L. Fitting Kourkoutis, S. Mita, H. S. Craft, D. A. Muller, R. Collazo, Z. Sitar, J-P. Maria
J. Cryst. Growth 311, 1106-1109 (2009)

Epitaxial Ba0.5Sr0.5TiO3 – GaN heterostructures with abrupt interfaces
Tagged on: 2009
  • ← Ion implantation and cluster formation in silica
  • A ferroelectric oxide made directly on silicon →

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