Atomically engineered metal-insulator transition at the TiO2/LaAlO3 heterointerface

lg75 February 1, 2021February 1, 2021 Publications

Atomically engineered metal-insulator transition at the TiO₂/LaAlO₃ heterointerface
M. Minohara, T. Tachikawa, Y. Nakanishi, Y. Hikita, L. F. Kourkoutis, J-S. Lee, C-C. Kao, M. Yoshita, H. Akiyama, C. Bell, H. Y. Hwang
Nano Lett. 14, 6743 (2014)

Tagged on: 2014

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Atomically engineered metal-insulator transition at the TiO2/LaAlO3 heterointerface

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